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RM4N650T2

MOSFET TO-220 MOSFET

Product Category: MOSFET
Mfr. Part #
RM4N650T2
Manufacturer: Rectron
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: RM4N650T2 Datasheet
Inventory: In Stock

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Mfr. Part #: RM4N650T2

Specifications

Specifications

Manufacturer Rectron

Technology Si

Mounting Style Through Hole

Package / Case TO-220-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 650 V

Id - Continuous Drain Current 4 A

Rds On - Drain-Source Resistance 1.2 Ohms

Vgs - Gate-Source Voltage - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

Qg - Gate Charge 10 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 46 W

Channel Mode Enhancement

Packaging Tube

Configuration Single

Transistor Type 1 N-Channel

Brand Rectron

Forward Transconductance - Min 4 S

Fall Time 8 ns

Product Type MOSFET

Rise Time 3 ns

Standard Pack Qty 1000

Subcategory MOSFETs

Typical Turn-Off Delay Time 48 ns

Typical Turn-On Delay Time 6 ns

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Mfr. Part #: RM4N650T2