wholesale RM6N800LD-T MOSFET supplier,manufacturer,distributor

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RM6N800LD-T

MOSFET D-PAK MOSFET

  • MOSFET
  • RM6N800LD-T
  • Rectron
  • Reel
  • RM6N800LD-T Datasheet
  • In Stock
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Mfr. Part #: RM6N800LD-T

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  • Specifications

Specifications

Manufacturer Rectron
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 900 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 24 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 98 W
Channel Mode Enhancement
Packaging Reel
Configuration Single
Transistor Type 1 N-Channel
Brand Rectron
Forward Transconductance - Min 6 S
Fall Time 6 ns
Product Type MOSFET
Rise Time 5 ns
Standard Pack Qty 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 53 ns
Typical Turn-On Delay Time 10 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RM6N800LD-T. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RM6N800LD-T

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