wholesale RM6N800T2 MOSFET supplier,manufacturer,distributor

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RM6N800T2

MOSFET TO-220 MOSFET

  • MOSFET
  • RM6N800T2
  • Rectron
  • Tube
  • RM6N800T2 Datasheet
  • In Stock
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Mfr. Part #: RM6N800T2

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  • Specifications

Specifications

Manufacturer Rectron
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 900 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 22.8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 98 W
Channel Mode Enhancement
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand Rectron
Forward Transconductance - Min 6 S
Fall Time 6 ns
Product Type MOSFET
Rise Time 5 ns
Standard Pack Qty 1000
Subcategory MOSFETs
Typical Turn-Off Delay Time 53 ns
Typical Turn-On Delay Time 10 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RM6N800T2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: RM6N800T2

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