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RMP6N60T2

MOSFET TO-220 MOSFET

  • MOSFET
  • RMP6N60T2
  • Rectron
  • Tube
  • RMP6N60T2 Datasheet
  • In Stock
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Mfr. Part #: RMP6N60T2

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  • Specifications

Specifications

Manufacturer Rectron
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 1.65 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 35 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 100 W
Channel Mode Enhancement
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand Rectron
Forward Transconductance - Min 5 S
Fall Time 58 ns
Product Type MOSFET
Rise Time 58 ns
Standard Pack Qty 1000
Subcategory MOSFETs
Typical Turn-Off Delay Time 75 ns
Typical Turn-On Delay Time 25 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RMP6N60T2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: RMP6N60T2

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