wholesale RN1106MFV,L3F BJTs - Bipolar Transistors - Pre-Biased supplier,manufacturer,distributor

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RN1106MFVL3F

Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

  • BJTs - Bipolar Transistors - Pre-Biased
  • RN1106MFV,L3F
  • Toshiba
  • In Stock
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Mfr. Part #: RN1106MFV,L3F

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Configuration Single
Transistor Polarity NPN
Typical Input Resistor 4.7 kOhms
Typical Resistor Ratio 0.1
Mounting Style SMD/SMT
Package / Case SOT-723-3
DC Collector/Base Gain hfe Min 80
Maximum Operating Frequency -
Collector- Emitter Voltage VCEO Max 50 V
Continuous Collector Current 100 mA
Peak DC Collector Current -
Pd - Power Dissipation 150 mW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series RN1106MFV
Emitter- Base Voltage VEBO 5 V
Brand Toshiba
Channel Mode Enhancement
Maximum DC Collector Current 100 mA
Product Type BJTs - Bipolar Transistors - Pre-Biased
Qualification AEC-Q101
Standard Pack Qty 8000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RN1106MFVL3F. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RN1106MFV,L3F

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