wholesale RN1706JE(TE85L,F) BJTs - Bipolar Transistors - Pre-Biased supplier,manufacturer,distributor

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RN1706JETE85LF

Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A

  • BJTs - Bipolar Transistors - Pre-Biased
  • RN1706JE(TE85L,F)
  • Toshiba
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: RN1706JE(TE85L,F)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Configuration Dual
Transistor Polarity NPN
Typical Input Resistor 4.7 kOhms
Typical Resistor Ratio 0.1
Mounting Style SMD/SMT
Package / Case ESV-5
DC Collector/Base Gain hfe Min 80
Maximum Operating Frequency 250 MHz
Collector- Emitter Voltage VCEO Max 50 V
Continuous Collector Current 100 mA
Peak DC Collector Current 100 mA
Pd - Power Dissipation 100 mW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series RN1706
Packaging Cut Tape
Packaging Reel
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V
Brand Toshiba
Product Type BJTs - Bipolar Transistors - Pre-Biased
Standard Pack Qty 4000
Subcategory Transistors

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Please send inquiry, we will respond immediately.

Mfr. Part #: RN1706JE(TE85L,F)

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