wholesale RN1904FE,LF(CT BJTs - Bipolar Transistors - Pre-Biased supplier,manufacturer,distributor

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RN1904FELFCT

Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

  • BJTs - Bipolar Transistors - Pre-Biased
  • RN1904FE,LF(CT
  • Toshiba
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: RN1904FE,LF(CT

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Configuration Dual
Transistor Polarity NPN
Mounting Style SMD/SMT
Package / Case ES-6
DC Collector/Base Gain hfe Min 80
Collector- Emitter Voltage VCEO Max 50 V
Pd - Power Dissipation 100 mW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series RN1904
Packaging Cut Tape
Packaging Reel
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 10 V
Brand Toshiba
Maximum DC Collector Current 100 mA
Product Type BJTs - Bipolar Transistors - Pre-Biased
Standard Pack Qty 4000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RN1904FELFCT. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RN1904FE,LF(CT

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