wholesale RN1968(TE85L,F) BJTs - Bipolar Transistors - Pre-Biased supplier,manufacturer,distributor

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RN1968TE85LF

Bipolar Transistors - Pre-Biased US6 TRANSISTOR Pd 50mW F 1Mhz (LF)

  • BJTs - Bipolar Transistors - Pre-Biased
  • RN1968(TE85L,F)
  • Toshiba
  • Cut Tape/Reel
  • In Stock
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Mfr. Part #: RN1968(TE85L,F)

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  • Specifications

Specifications

Manufacturer Toshiba
Configuration Dual
Transistor Polarity NPN
Typical Input Resistor 22 kOhms
Typical Resistor Ratio 0.468
Mounting Style SMD/SMT
Package / Case US-6
DC Collector/Base Gain hfe Min 70
Maximum Operating Frequency 250 MHz
Collector- Emitter Voltage VCEO Max 50 V
Continuous Collector Current 100 mA
Peak DC Collector Current 100 mA
Pd - Power Dissipation 200 mW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Packaging Cut Tape
Packaging Reel
Emitter- Base Voltage VEBO 7 V
Brand Toshiba
Channel Mode Enhancement
Maximum DC Collector Current 100 mA
Product Type BJTs - Bipolar Transistors - Pre-Biased
Standard Pack Qty 3000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the RN1968TE85LF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: RN1968(TE85L,F)

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