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RN2701LF

Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=-50V, IC=-0.1A

Product Category: BJTs - Bipolar Transistors - Pre-Biased
Mfr. Part #
RN2701,LF
Manufacturer: Toshiba
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: RN2701,LF

Specifications

Specifications

Manufacturer Toshiba

Configuration Dual

Transistor Polarity PNP

Mounting Style SMD/SMT

Package / Case USV-5

DC Collector/Base Gain hfe Min 30

Collector- Emitter Voltage VCEO Max - 50 V

Pd - Power Dissipation 200 mW

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Packaging Cut Tape

Packaging Reel

Collector- Base Voltage VCBO - 50 V

Emitter- Base Voltage VEBO - 10 V

Brand Toshiba

Maximum DC Collector Current - 100 mA

Product Type BJTs - Bipolar Transistors - Pre-Biased

Qualification AEC-Q101

Standard Pack Qty 3000

Subcategory Transistors

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Please send inquiry, we will respond immediately.

Mfr. Part #: RN2701,LF