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RN4985FELFCT

Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A

Product Category: BJTs - Bipolar Transistors - Pre-Biased
Mfr. Part #
RN4985FE,LF(CT
Manufacturer: Toshiba
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: RN4985FE,LF(CT

Specifications

Specifications

Manufacturer Toshiba

Configuration Dual

Transistor Polarity NPN, PNP

Mounting Style SMD/SMT

Package / Case ES-6

DC Collector/Base Gain hfe Min 80

Collector- Emitter Voltage VCEO Max - 50 V, 50 V

Pd - Power Dissipation 100 mW

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series RN4985

Packaging Cut Tape

Packaging Reel

Collector- Base Voltage VCBO - 50 V, 50 V

Emitter- Base Voltage VEBO - 5 V, 5 V

Brand Toshiba

Maximum DC Collector Current - 100 mA, 100 mA

Product Type BJTs - Bipolar Transistors - Pre-Biased

Standard Pack Qty 4000

Subcategory Transistors

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Mfr. Part #: RN4985FE,LF(CT