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SD57030-01

RF MOSFET Transistors N-Ch 65 Volt 4 Amp

Product Category: Transistors RF
Mfr. Part #
SD57030-01
Manufacturer: STMicroelectronics
Package: Bulk
Lead Free Status /RoHS Status:
Data Sheet: SD57030-01 Datasheet
Inventory: In Stock

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Mfr. Part #: SD57030-01

Specifications
Product Details

Specifications

Manufacturer STMicroelectronics

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 4 A

Vds - Drain-Source Breakdown Voltage 65 V

Operating Frequency 1 GHz

Gain 13 dB

Output Power 30 W

Minimum Operating Temperature - 65 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case M250

Packaging Bulk

RF & Wireless RF MOSFET Transistors

Configuration Single

Height 3.94 mm

Length 9.91 mm

Series SD57030-01

Transistor Type LDMOS FET

Type RF Power MOSFET

Width 6.09 mm

Brand STMicroelectronics

Forward Transconductance - Min 1.8 S

Channel Mode Enhancement

Pd - Power Dissipation 74 W

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage 20 V

Product Details

DESCRIPTION

The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

â– EXCELLENT THERMAL STABILITY

â– COMMON SOURCE CONFIGURATION
â– POUT = 30 W with 13 dB gain @ 945 MHz
â– BeO FREE PACKAGE

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Mfr. Part #: SD57030-01