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SI1563EDH-T1-GE3

MOSFET 1.13A, 880mA N and P-Channel Surface Mount -55°C ~ 150°C (TJ) 6-TSSOP, SC-88, SOT-363 570mW TrenchFET® 20V

  • FETs - Arrays
  • SI1563EDH-T1-GE3
  • ROHM
  • 6-TSSOP, SC-88, SOT-363
  • SI1563EDH-T1-GE3 Datasheet
  • In Stock
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Mfr. Part #: SI1563EDH-T1-GE3

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  • Specifications
  • Product Details

Specifications

Manufacturer ROHM
Product Category FETs - Arrays
Series TrenchFET®
Packaging Tape & Reel (TR)
Package-Case 6-TSSOP, SC-88, SOT-363
Operating-Temperature -55°C ~ 150°C (TJ)
Mounting-Type Surface Mount
Supplier-Device-Package SC-70-6 (SOT-363)
FET-Type N and P-Channel
Power-Max 570mW
VDSS – Drain-Source Voltage 20V
Input Capacitance -
FET-Feature Logic Level Gate
Current-Continuous-Drain-Id-25°C 1.13A, 880mA
Rds-On-Max-Id-Vgs 280 mOhm @ 1.13A, 4.5V
Vgs-th-Max-Id 1V @ 100μA
Gate-Charge-Qg-Vgs 1nC @ 4.5V

Product Details

FEATURES

• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the SI1563EDH-T1-GE3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: SI1563EDH-T1-GE3

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