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SI4286DY-T1-GE3

MOSFET 7A 2 N-Channel (Dual) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2.9W TrenchFETÂ® 40V

Product Category: FETs - Arrays
Mfr. Part #
SI4286DY-T1-GE3
Manufacturer: ROHM
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: SI4286DY-T1-GE3 Datasheet
Inventory: In Stock

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Mfr. Part #: SI4286DY-T1-GE3

Specifications
Product Details

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series TrenchFETÂ®

Packaging Alternate Packaging

Part-Aliases SI4286DY-GE3

Unit-Weight 0.019048 oz

Mounting-Style SMD/SMT

Package-Case 8-SOIC (0.154", 3.90mm Width)

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 8-SO

Configuration Dual

FET-Type 2 N-Channel (Dual)

Power-Max 2.9W

Transistor-Type 2 N-Channel

VDSS â€“ Drain-Source Voltage 40V

Input Capacitance 375pF @ 20V

FET-Feature Standard

Current-Continuous-Drain-Id-25Â°C 7A

Rds-On-Max-Id-Vgs 32.5 mOhm @ 8A, 10V

Vgs-th-Max-Id 2.5V @ 250Î¼A

Gate-Charge-Qg-Vgs 10.5nC @ 10V

Pd-Power-Dissipation 2.9 W

Fall-Time 7 ns

Rise-Time 11 ns

Vgs-Gate-Source-Voltage 20 V

ID (drain current) 7 A

Vds-Drain-Source-Breakdown-Voltage 40 V

Rds-On-Drain-Source-Resistance 27 mOhms

Transistor-Polarity N-Channel

Typical-Turn-Off-Delay-Time 10 ns

Turn-On Delay Time 9 ns

Qg-Gate-Charge 6.8 nC

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

Product Details

FEATURES

â€¢ Halogen-free According to IEC 61249-2-21 Definition
â€¢ TrenchFETÂ® Gen III Power MOSFET
â€¢ 100 % Rg Tested
â€¢ 100 % UIS Tested
â€¢ Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

â€¢ DC/DC Converter
- External HDD
- Notebook System
â€¢ LCD Display Backligh

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Mfr. Part #: SI4286DY-T1-GE3