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SI4563DY-T1-E3

MOSFET 8A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 3.25W TrenchFETÂ® 40V

Product Category: FETs - Arrays
Mfr. Part #
SI4563DY-T1-E3
Manufacturer: ROHM
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: SI4563DY-T1-E3 Datasheet
Inventory: In Stock

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Mfr. Part #: SI4563DY-T1-E3

Specifications

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series TrenchFETÂ®

Packaging Alternate Packaging

Part-Aliases SI4563DY-E3

Unit-Weight 0.006596 oz

Mounting-Style SMD/SMT

Package-Case 8-SOIC (0.154", 3.90mm Width)

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 8-SO

Configuration 1 N-Channel 1 P-Channel

FET-Type N and P-Channel

Power-Max 3.25W

Transistor-Type 1 N-Channel 1 P-Channel

VDSS â€“ Drain-Source Voltage 40V

Input Capacitance 2390pF @ 20V

FET-Feature Standard

Current-Continuous-Drain-Id-25Â°C 8A

Rds-On-Max-Id-Vgs 16 mOhm @ 5A, 10V

Vgs-th-Max-Id 2V @ 250Î¼A

Gate-Charge-Qg-Vgs 85nC @ 10V

Pd-Power-Dissipation 2 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Fall-Time 19 ns 69 ns

Rise-Time 117 ns 93 ns

Vgs-Gate-Source-Voltage 16 V

ID (drain current) 8 A

Vds-Drain-Source-Breakdown-Voltage 40 V

Rds-On-Drain-Source-Resistance 13 mOhms 20 mOhms

Transistor-Polarity N-Channel P-Channel

Typical-Turn-Off-Delay-Time 62 ns 80 ns

Turn-On Delay Time 88 ns 33 ns

Channel-Mode Enhancement

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Mfr. Part #: SI4563DY-T1-E3