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SI4830CDY-T1-GE3

MOSFET 8A 2 N-Channel (Half Bridge) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2.9W LITTLE FOOTÂ® 30V

Product Category: FETs - Arrays
Mfr. Part #
SI4830CDY-T1-GE3
Manufacturer: ROHM
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: SI4830CDY-T1-GE3 Datasheet
Inventory: In Stock

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Mfr. Part #: SI4830CDY-T1-GE3

Specifications
Product Details

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series LITTLE FOOTÂ®

Packaging Alternate Packaging

Part-Aliases SI4830CDY-GE3

Unit-Weight 0.017870 oz

Mounting-Style SMD/SMT

Package-Case 8-SOIC (0.154", 3.90mm Width)

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 8-SO

Configuration Dual

FET-Type 2 N-Channel (Half Bridge)

Power-Max 2.9W

Transistor-Type 2 N-Channel

VDSS â€“ Drain-Source Voltage 30V

Input Capacitance 950pF @ 15V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 8A

Rds-On-Max-Id-Vgs 20 mOhm @ 8A, 10V

Vgs-th-Max-Id 3V @ 1mA

Gate-Charge-Qg-Vgs 25nC @ 10V

Pd-Power-Dissipation 2 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Vgs-Gate-Source-Voltage 20 V

ID (drain current) 5.7 A

Vds-Drain-Source-Breakdown-Voltage 30 V

Rds-On-Drain-Source-Resistance 20 mOhms

Transistor-Polarity N-Channel

Qg-Gate-Charge 16.5 nC

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

Product Details

FEATURES

â€¢ Halogen-free According to IEC 61249-2-21 Definition
â€¢ LITTLE FOOTÂ® Plus Schottky
â€¢ PWM Optimized
â€¢ 100 % Rg Tested
â€¢ 100 % UIS Tested
â€¢ Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

â€¢ Notebook Logic dc-to-dc
â€¢ Low Current dc-to-dc

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Mfr. Part #: SI4830CDY-T1-GE3