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SI6969BDQ-T1-E3

MOSFET 4A 2 P-Channel (Dual) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-TSSOP (0.173", 4.40mm Width) 830mW TrenchFETÂ® 12V

Product Category: FETs - Arrays
Mfr. Part #
SI6969BDQ-T1-E3
Manufacturer: ROHM
Package: 8-TSSOP (0.173", 4.40mm Width)
Lead Free Status /RoHS Status:
Data Sheet: SI6969BDQ-T1-E3 Datasheet
Inventory: In Stock

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Mfr. Part #: SI6969BDQ-T1-E3

Specifications
Product Details

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series TrenchFETÂ®

Packaging Package-Case

8-TSSOP (0.173", 4.40mm Width) Operating-Temperature

-55Â°C ~ 150Â°C (TJ) Mounting-Type

Surface Mount Supplier-Device-Package

8-TSSOP FET-Type

2 P-Channel (Dual) Power-Max

830mW VDSS â€“ Drain-Source Voltage

12V Input Capacitance

- FET-Feature

Logic Level Gate Current-Continuous-Drain-Id-25Â°C

4A Rds-On-Max-Id-Vgs

30 mOhm @ 4.6A, 4.5V Vgs-th-Max-Id

800mV @ 250Î¼A Gate-Charge-Qg-Vgs

Product Details

General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductorâ€™s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V â€“ 12V).

Features

â€¢ â€“3.8 A, â€“20 V, RDS(ON) = 0.043 â„¦ @ VGS = â€“4.5 V
RDS(ON) = 0.070 â„¦ @ VGS = â€“2.5 V
â€¢ Extended VGSS range (Â±12V) for battery applications
â€¢ Low gate charge
â€¢ High performance trench technology for extremely low RDS(ON)
â€¢ Low profile TSSOP-8 package

Applications

â€¢ Load switch
â€¢ Motor drive
â€¢ DC/DC conversion
â€¢ Power management

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Mfr. Part #: SI6969BDQ-T1-E3