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SI7540DP-T1-GE3

MOSFET 7.6A, 5.7A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) PowerPAKR SO-8 Dual 1.4W TrenchFETÂ® 12V

Product Category: FETs - Arrays
Mfr. Part #
SI7540DP-T1-GE3
Manufacturer: ROHM
Package: PowerPAKÂ® SO-8 Dual
Lead Free Status /RoHS Status:
Data Sheet: SI7540DP-T1-GE3 Datasheet
Inventory: In Stock

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Mfr. Part #: SI7540DP-T1-GE3

Specifications

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series TrenchFETÂ®

Packaging Alternate Packaging

Part-Aliases SI7540DP-GE3

Unit-Weight 0.017870 oz

Mounting-Style SMD/SMT

Package-Case PowerPAKR SO-8 Dual

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package PowerPAKR SO-8 Dual

Configuration Single

FET-Type N and P-Channel

Power-Max 1.4W

Transistor-Type 1 N-Channel 1 P-Channel

VDSS â€“ Drain-Source Voltage 12V

Input Capacitance -

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 7.6A, 5.7A

Rds-On-Max-Id-Vgs 17 mOhm @ 11.8A, 4.5V

Vgs-th-Max-Id 1.5V @ 250Î¼A

Gate-Charge-Qg-Vgs 17nC @ 4.5V

Pd-Power-Dissipation 3.5 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Fall-Time 50 ns 42 ns

Rise-Time 50 ns 42 ns

Vgs-Gate-Source-Voltage 8 V

ID (drain current) 11.8 A

Vds-Drain-Source-Breakdown-Voltage 12 V

Rds-On-Drain-Source-Resistance 14 mOhms 26 mOhms

Transistor-Polarity N-Channel P-Channel

Typical-Turn-Off-Delay-Time 60 ns 54 ns

Turn-On Delay Time 30 ns 35 ns

Channel-Mode Enhancement

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Mfr. Part #: SI7540DP-T1-GE3