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SI9926CDY-T1
- Product Category: FETs - Arrays
- Mfr. Part # SI9926CDY-T1
- Package: SO-8
- Lead Free Status /RoHS Status:
- Data Sheet: SI9926CDY-T1 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: SI9926CDY-T1
- Product Details
Product Details
DESCRIPTION
The attached spice model describes the typical electricalcharacteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
CHARACTERISTICS
• N-Channel Vertical DMOS• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
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Please send inquiry, we will respond immediately.
Mfr. Part #: SI9926CDY-T1
