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SST5462-T1-E3

JFETs 40V P-Channel Surface Mount 350mW SOT-23

Product Category: JFETs
Mfr. Part #
SST5462-T1-E3
Manufacturer: ROHM
Package: TO-236-3, SC-59, SOT-23-3
Lead Free Status /RoHS Status:
Data Sheet: SST5462-T1-E3 Datasheet
Inventory: In Stock

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Mfr. Part #: SST5462-T1-E3

Specifications
Product Details

Specifications

Manufacturer ROHM

Product Category JFETs

Series -

Packaging Tape & Reel (TR)

Package-Case TO-236-3, SC-59, SOT-23-3

Mounting-Type Surface Mount

Supplier-Device-Package SOT-23

FET-Type P-Channel

Power-Max 350mW

Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.

40V VDSS â€“ Drain-Source Voltage

- Current-Drain-Idss-Vds-Vgs=0

4mA @ 15V Current-Drain-Id-Max

- Voltage-Cutoff-VGS-off-Id

1.8V @ 1Î¼A Input Capacitance

7pF @ 15V Resistance-RDS-On

Product Details

DESCRIPTION

The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information).

FEATURES

â— High Input Impedance
â— Very Low Noise
â— High Gain: AV = 80 @ 20 A
â— Low Capacitance: 1.2 pF Typical

BENEFITS

â— Low Signal Loss/System Error
â— High System Sensitivity
â— High-Quality Low-Level Signal Amplification

APPLICATIONS

â— Low-Current, Low-Voltage Amplifiers
â— High-Side Switching
â— Ultrahigh Input Impedance Pre-Amplifiers

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Mfr. Part #: SST5462-T1-E3