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STGB18N40LZT4

IGBT Transistors EAS 180 mJ-400 V

  • IGBT Transistors
  • STGB18N40LZT4
  • STMicroelectronics
  • Cut Tape/Reel
  • STGB18N40LZT4 Datasheet
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Mfr. Part #: STGB18N40LZT4

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  • Product Details

Product Details

Description

This IGBT utilizes the advanced PowerMESHâ„¢ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features

â–  AEC Q101 compliant
■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
â–  ESD gate-emitter protection
â–  Gate-collector high voltage clamping
â–  Logic level gate drive
â–  Low saturation voltage
â–  High pulsed current capability
â–  Gate and gate-emitter resistor

Application

â–  Pencil coil electronic ignition driver

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STGB18N40LZT4. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: STGB18N40LZT4

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