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STGF19NC60KD

IGBT Transistors 2A 6V SHORT CIRCUIT RUGGED IGBT

  • IGBT Transistors
  • STGF19NC60KD
  • STMicroelectronics
  • Tube
  • STGF19NC60KD Datasheet
  • In Stock
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Mfr. Part #: STGF19NC60KD

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  • Specifications
  • Product Details

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-220FP-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 35 A
Pd - Power Dissipation 32 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series STGF19NC60KD
Packaging Tube
Continuous Collector Current Ic Max 16 A
Height 9.3 mm
Length 10.4 mm
Width 4.6 mm
Brand STMicroelectronics
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 1000
Subcategory IGBTs

Product Details

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

â–  Lower on voltage drop (Vcesat)

â–  Lower CRES / CIES ratio (no cross-conduction susceptibility)
â–  Very soft ultra fast recovery antiparallel diode
■ Short circuit withstand time 10µs

Applications

â–  High frequency motor controls
â–  SMPS and PFC in both hard switch and resonant topologies
â–  Motor drivers

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STGF19NC60KD. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: STGF19NC60KD

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