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STGP10NB60SD

IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH

Product Category: IGBT Transistors
Mfr. Part #
STGP10NB60SD
Manufacturer: STMicroelectronics
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: STGP10NB60SD Datasheet
Inventory: In Stock

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Mfr. Part #: STGP10NB60SD

Specifications
Product Details

Specifications

Manufacturer STMicroelectronics

Technology Si

Package / Case TO-220-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 600 V

Collector-Emitter Saturation Voltage 1.35 V

Maximum Gate Emitter Voltage - 20 V, + 20 V

Continuous Collector Current at 25 C 29 A

Pd - Power Dissipation 80 W

Minimum Operating Temperature - 65 C

Maximum Operating Temperature + 150 C

Series STGP10NB60SD

Packaging Tube

Continuous Collector Current Ic Max 20 A

Height 9.15 mm

Length 10.4 mm

Width 4.6 mm

Brand STMicroelectronics

Product Type IGBT Transistors

Standard Pack Qty 1000

Subcategory IGBTs

Product Details

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHâ„¢ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz).

General features

â– HIGH CURRENT CAPABILITY
â– HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

Applications

â– LIGHT DIMMER
â– STATIC RELAYS
â– MOTOR CONTROL

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Mfr. Part #: STGP10NB60SD