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STGW30H65FB

IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT

  • IGBT Transistors
  • STGW30H65FB
  • STMicroelectronics
  • Tube
  • STGW30H65FB Datasheet
  • In Stock
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Mfr. Part #: STGW30H65FB

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.75 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 30 A
Pd - Power Dissipation 260 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGW30H65FB
Packaging Tube
Continuous Collector Current Ic Max 60 A
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 nA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STGW30H65FB. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: STGW30H65FB

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