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STGW40V60DF

IGBT Transistors 600V 40A High Speed Trench Gate IGBT

Product Category: IGBT Transistors
Mfr. Part #
STGW40V60DF
Manufacturer: STMicroelectronics
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: STGW40V60DF Datasheet
Inventory: In Stock

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Mfr. Part #: STGW40V60DF

Specifications
Product Details

Specifications

Manufacturer STMicroelectronics

Technology Si

Package / Case TO-247

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 600 V

Collector-Emitter Saturation Voltage 2.35 V

Maximum Gate Emitter Voltage - 20 V, + 20 V

Continuous Collector Current at 25 C 80 A

Pd - Power Dissipation 283 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Series STGW40V60DF

Packaging Tube

Brand STMicroelectronics

Gate-Emitter Leakage Current 250 nA

Product Type IGBT Transistors

Standard Pack Qty 600

Subcategory IGBTs

Product Details

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features
â€¢ Maximum junction temperature: TJ = 175 Â°C
â€¢ High speed switching series
â€¢ Minimized tail current
â€¢ Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC = 40 A
â€¢ Tight parameters distribution
â€¢ Safe paralleling
â€¢ Low thermal resistance
â€¢ Low VF soft recovery co-packaged diode
â€¢ Lead free package

Applications
â€¢ Induction heating
â€¢ Microwave oven
â€¢ Resonant converters

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Mfr. Part #: STGW40V60DF