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STGW60H65DFB-4

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

  • IGBT Transistors
  • STGW60H65DFB-4
  • STMicroelectronics
  • Tube
  • STGW60H65DFB-4 Datasheet
  • In Stock
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Mfr. Part #: STGW60H65DFB-4

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-247-4
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.6 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 283 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGW60H65DFB-4
Packaging Tube
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 uA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STGW60H65DFB-4. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: STGW60H65DFB-4

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