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STGW8M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

  • IGBT Transistors
  • STGW8M120DF3
  • STMicroelectronics
  • Tube
  • STGW8M120DF3 Datasheet
  • In Stock
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Mfr. Part #: STGW8M120DF3

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.85 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 16 A
Pd - Power Dissipation 167 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series M
Packaging Tube
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 uA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

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Mfr. Part #: STGW8M120DF3

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