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STGWA20HP65FB2

IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT

  • IGBT Transistors
  • STGWA20HP65FB2
  • STMicroelectronics
  • Tube
  • STGWA20HP65FB2 Datasheet
  • In Stock
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Mfr. Part #: STGWA20HP65FB2

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.65 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 40 A
Pd - Power Dissipation 147 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series HB2
Packaging Tube
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 nA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

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Mfr. Part #: STGWA20HP65FB2

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