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STGWA25H120DF2

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

  • IGBT Transistors
  • STGWA25H120DF2
  • STMicroelectronics
  • Tube
  • STGWA25H120DF2 Datasheet
  • In Stock
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Mfr. Part #: STGWA25H120DF2

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.5 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 50 A
Pd - Power Dissipation 375 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGWA25H120DF2
Packaging Tube
Brand STMicroelectronics
Continuous Collector Current 25 A
Gate-Emitter Leakage Current 250 nA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STGWA25H120DF2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: STGWA25H120DF2

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