wholesale STGWT40H65DFB IGBT Transistors supplier,manufacturer,distributor

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STGWT40H65DFB

IGBT Transistors 650V 40A HSpd trench gate field-stop IGB

  • IGBT Transistors
  • STGWT40H65DFB
  • STMicroelectronics
  • Tube
  • STGWT40H65DFB Datasheet
  • In Stock
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Mfr. Part #: STGWT40H65DFB

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-3P
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.6 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 283 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGWT40H65DFB
Packaging Tube
Continuous Collector Current Ic Max 40 A
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 nA
Product Type IGBT Transistors
Standard Pack Qty 300
Subcategory IGBTs

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Mfr. Part #: STGWT40H65DFB

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