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Si3585CDV-T1-GE3

MOSFET 3.9A, 2.1A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) SOT-23-6 Thin, TSOT-23-6 1.4W, 1.3W TrenchFETÂ® 20V

Product Category: FETs - Arrays
Mfr. Part #
Si3585CDV-T1-GE3
Manufacturer: ROHM
Package: SOT-23-6
Lead Free Status /RoHS Status:
Data Sheet: Si3585CDV-T1-GE3 Datasheet
Inventory: In Stock

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Mfr. Part #: Si3585CDV-T1-GE3

Specifications

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series TrenchFETÂ®

Packaging Alternate Packaging

Part-Aliases SI3585CDV-GE3

Unit-Weight 0.000705 oz

Mounting-Style SMD/SMT

Package-Case SOT-23-6 Thin, TSOT-23-6

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 6-TSOP

Configuration 1 N-Channel 1 P-Channel

FET-Type N and P-Channel

Power-Max 1.4W, 1.3W

Transistor-Type 1 N-Channel 1 P-Channel

VDSS â€“ Drain-Source Voltage 20V

Input Capacitance 150pF @ 10V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 3.9A, 2.1A

Rds-On-Max-Id-Vgs 58 mOhm @ 2.5A, 4.5V

Vgs-th-Max-Id 1.5V @ 250Î¼A

Gate-Charge-Qg-Vgs 4.8nC @ 10V

Pd-Power-Dissipation 1.4 W 1.3 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Fall-Time 8 ns 7 ns

Rise-Time 20 ns 10 ns

Vgs-Gate-Source-Voltage 12 V

ID (drain current) 3.9 A - 2.1 A

Vds-Drain-Source-Breakdown-Voltage 20 V

Vgs-th-Gate-Source-Threshold-Voltage 1.5 V - 1.5 V

Rds-On-Drain-Source-Resistance 58 mOhms 195 mOhms

Transistor-Polarity N-Channel P-Channel

Typical-Turn-Off-Delay-Time 11 ns 13 ns

Turn-On Delay Time 5 ns 3 ns

Qg-Gate-Charge 3.2 nC 6 nC

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

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Mfr. Part #: Si3585CDV-T1-GE3