wholesale Si3588DV-T1-E3 FETs - Arrays supplier,manufacturer,distributor

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Si3588DV-T1-E3

MOSFET 2.5A, 570mA N and P-Channel Surface Mount -55°C ~ 150°C (TJ) SOT-23-6 Thin, TSOT-23-6 830mW, 83mW TrenchFET® 20V

  • FETs - Arrays
  • Si3588DV-T1-E3
  • ROHM
  • SOT-23-6 Thin, TSOT-23-6
  • Si3588DV-T1-E3 Datasheet
  • In Stock
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Mfr. Part #: Si3588DV-T1-E3

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  • Specifications

Specifications

Manufacturer ROHM
Product Category FETs - Arrays
Series TrenchFET®
Packaging Part-Aliases
SI3588DV-E3 Unit-Weight
0.000705 oz Mounting-Style
SMD/SMT Tradename
TrenchFET Package-Case
SOT-23-6 Thin, TSOT-23-6 Technology
Si Operating-Temperature
-55°C ~ 150°C (TJ) Mounting-Type
Surface Mount Number-of-Channels
2 Channel Supplier-Device-Package
6-TSOP Configuration
1 N-Channel 1 P-Channel FET-Type
N and P-Channel Power-Max
830mW, 83mW Transistor-Type
1 N-Channel 1 P-Channel VDSS – Drain-Source Voltage
20V Input Capacitance
- FET-Feature
Logic Level Gate Current-Continuous-Drain-Id-25°C
2.5A, 570mA Rds-On-Max-Id-Vgs
80 mOhm @ 3A, 4.5V Vgs-th-Max-Id
450mV @ 250μA (Min) Gate-Charge-Qg-Vgs
7.5nC @ 4.5V Pd-Power-Dissipation
830 mW Maximum Operating Temperature
+ 150 C Operating temperature range
- 55 C Fall-Time
30 ns 29 ns Rise-Time
30 ns 29 ns Vgs-Gate-Source-Voltage
8 V ID (drain current)
2.5 A Vds-Drain-Source-Breakdown-Voltage
20 V Rds-On-Drain-Source-Resistance
80 mOhms 145 mOhms Transistor-Polarity
N-Channel P-Channel Typical-Turn-Off-Delay-Time
28 ns 24 ns Turn-On Delay Time
12 ns 12 ns Channel-Mode

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the Si3588DV-T1-E3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: Si3588DV-T1-E3

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