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Si4532CDY-T1-GE3

MOSFET 6A, 4.3A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2.78W TrenchFETÂ® 30V

Product Category: FETs - Arrays
Mfr. Part #
Si4532CDY-T1-GE3
Manufacturer: ROHM
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: Si4532CDY-T1-GE3 Datasheet
Inventory: In Stock

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Mfr. Part #: Si4532CDY-T1-GE3

Specifications

Specifications

Manufacturer ROHM

Product Category FETs - Arrays

Series TrenchFETÂ®

Packaging Alternate Packaging

Part-Aliases SI4532CDY-GE3

Unit-Weight 0.006596 oz

Mounting-Style SMD/SMT

Package-Case 8-SOIC (0.154", 3.90mm Width)

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 8-SO

Configuration Dual Dual Drain

FET-Type N and P-Channel

Power-Max 2.78W

Transistor-Type 1 N-Channel 1 P-Channel

VDSS â€“ Drain-Source Voltage 30V

Input Capacitance 305pF @ 15V

FET-Feature Standard

Current-Continuous-Drain-Id-25Â°C 6A, 4.3A

Rds-On-Max-Id-Vgs 47 mOhm @ 3.5A, 10V

Vgs-th-Max-Id 3V @ 250Î¼A

Gate-Charge-Qg-Vgs 9nC @ 10V

Pd-Power-Dissipation 2.78 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Fall-Time 6 nS 7.7 nS

Rise-Time 12 nS 13 nS

Vgs-Gate-Source-Voltage 20 V

ID (drain current) 6 A

Vds-Drain-Source-Breakdown-Voltage 30 V

Rds-On-Drain-Source-Resistance 38 mOhms 73 mOhms

Transistor-Polarity N-Channel P-Channel

Typical-Turn-Off-Delay-Time 14 nS 17 nS

Turn-On Delay Time 7 nS 5.5 nS

Qg-Gate-Charge 6 nC 7.8 nC

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

7 S 7 S Channel-Mode

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Mfr. Part #: Si4532CDY-T1-GE3