wholesale T1G2028536-FS Transistors RF supplier,manufacturer,distributor

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T1G2028536-FS

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

  • Transistors RF
  • T1G2028536-FS
  • Qorvo
  • Tray
  • T1G2028536-FS Datasheet
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Mfr. Part #: T1G2028536-FS

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 2 GHz
Gain 18 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 36 V
Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 24 A
Output Power 260 W
Maximum Drain Gate Voltage 48 V
Maximum Operating Temperature + 250 C
Pd - Power Dissipation 288 W
Mounting Style SMD/SMT
Package / Case NI-780
Packaging Tray
RF & Wireless RF JFET Transistors
Configuration Single
Product RF Power Transistor
Series T1G2028536
Type GaN SiC HEMT
Brand Qorvo
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 25
Subcategory Transistors

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Mfr. Part #: T1G2028536-FS

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