wholesale T1G4012036-FS Transistors RF supplier,manufacturer,distributor

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T1G4012036-FS

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak

  • Transistors RF
  • T1G4012036-FS
  • Qorvo
  • Tray
  • T1G4012036-FS Datasheet
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Mfr. Part #: T1G4012036-FS

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.3 GHz
Gain 18.4 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 36 V
Id - Continuous Drain Current 12 A
Maximum Drain Gate Voltage - 2.9 V
Pd - Power Dissipation 117 W
Mounting Style SMD/SMT
Packaging Tray
RF & Wireless RF JFET Transistors
Product GaN RF Power Transistors
Series T1G4012036
Type GaN SiC HEMT
Brand Qorvo
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 25
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the T1G4012036-FS. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: T1G4012036-FS

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