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T1G4020036-FL

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt

  • RF JFET Transistors
  • T1G4020036-FL
  • Qorvo
  • Tray
  • T1G4020036-FL Datasheet
  • In Stock
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Mfr. Part #: T1G4020036-FL

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.5 GHz
Gain 16 dB
Transistor Polarity N-Channel
Output Power 260 W
Package / Case NI-650
Packaging Tray
RF & Wireless RF JFET Transistors
Series T1G4020036
Type GaN SiC HEMT
Brand Qorvo
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 25
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the T1G4020036-FL. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: T1G4020036-FL

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