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TGF2819-FL

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

Product Category: Transistors RF
Mfr. Part #
TGF2819-FL
Manufacturer: Qorvo
Package: Tray
Lead Free Status /RoHS Status:
Data Sheet: TGF2819-FL Datasheet
Inventory: In Stock

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Mfr. Part #: TGF2819-FL

Specifications

Specifications

Manufacturer Qorvo

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 3.5 GHz

Gain 14 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 32 V

Vgs - Gate-Source Breakdown Voltage - 2.9 V

Id - Continuous Drain Current 7.32 A

Output Power 100 W

Maximum Drain Gate Voltage 145 V

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Pd - Power Dissipation 86 W

Mounting Style Screw Mount

Package / Case NI-360

Packaging Tray

RF & Wireless RF JFET Transistors

Configuration Single

Operating Temperature Range - 40 C to + 85 C

Series TGF2819

Type GaN SiC HEMT

Brand Qorvo

Development Kit TGF2819-FS/FL, EVAL BOARD

Moisture Sensitive Yes

Product Type RF JFET Transistors

Standard Pack Qty 25

Subcategory Transistors

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Mfr. Part #: TGF2819-FL