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TGF2978-SM

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB

  • Transistors RF
  • TGF2978-SM
  • Qorvo
  • Tray
  • TGF2978-SM Datasheet
  • In Stock
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Mfr. Part #: TGF2978-SM

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  • Specifications

Specifications

Manufacturer Qorvo
RoHS
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency DC to 12 GHz
Gain 11 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 32 V
Vgs - Gate-Source Breakdown Voltage - 2.7 V
Id - Continuous Drain Current 1.3 A
Output Power 19 W
Maximum Operating Temperature + 225 C
Pd - Power Dissipation 33 W
Mounting Style SMD/SMT
Package / Case QFN-20
Packaging Tray
RF & Wireless RF JFET Transistors
Configuration Single
Height 0.203 mm
Length 4 mm
Series TGF2978
Type GaN SiC HEMT
Width 3 mm
Brand Qorvo
Number of Channels 1 Channel
Development Kit TGF2978-SMEVB1
Moisture Sensitive Yes
Product Type RF JFET Transistors
Standard Pack Qty 50
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the TGF2978-SM. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: TGF2978-SM

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