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TISP4A265H3BJR-S

Thyristor Surge Protection Devices - TSPD ADSL voltage 23vPEAK Bidirectional

Product Category: TSPDs
Mfr. Part #
TISP4A265H3BJR-S
Manufacturer: Bourns
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: TISP4A265H3BJR-S Datasheet
Inventory: In Stock

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Mfr. Part #: TISP4A265H3BJR-S

Specifications
Product Details

Specifications

Manufacturer Bourns

Breakover Voltage VBO - 265 V, 125 V

Breakover Current IBO Max 600 mA

Non Repetitive On-State Current 55 A, 60 A

Rated Repetitive Off-State Voltage VDRM - 200 V, 100 V

Off-State Leakage Current @ VDRM IDRM 5 uA

Holding Current Ih Max 600 mA

Off-State Capacitance CO 20 pF to 71 pF

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Mounting Style SMD/SMT

Package / Case DO-214AA-2

Packaging Reel

Current Rating 5 A

Series TISP4A265H3BJ

Brand Bourns

On-State RMS Current - It RMS -

Product Type TSPDs

Standard Pack Qty 3000

Subcategory Thyristors

Tradename TISP

Product Details

description

The TISP4082 is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices consist of a bidirectional suppressor element connecting the A and B terminals. They will suppress inter-wire voltage transients.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

â— Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

â— Planar Passivated Junctions Low Off-State Current < 10 ÂµA
â— Rated for International Surge Wave Shapes
â— UL Recognized, E132482

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Please send inquiry, we will respond immediately.

Mfr. Part #: TISP4A265H3BJR-S

TISP4A265H3BJR-S

description

â— Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

â— Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge