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TP65H050G4WS

MOSFET GAN FET 650V 34A TO247

Product Category: MOSFET
Mfr. Part #
TP65H050G4WS
Manufacturer: Transphorm
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: TP65H050G4WS Datasheet
Inventory: In Stock

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Mfr. Part #: TP65H050G4WS

Specifications

Specifications

Manufacturer Transphorm

Technology GaN

Mounting Style SMD/SMT

Package / Case TO-247-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 650 V

Id - Continuous Drain Current 34 A

Rds On - Drain-Source Resistance 60 mOhms

Vgs - Gate-Source Voltage - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage 4.8 V

Qg - Gate Charge 24 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 119 W

Channel Mode Enhancement

Packaging Tube

Configuration Single

Brand Transphorm

Fall Time 10.9 ns

Product Type MOSFET

Rise Time 11.3 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 88.3 ns

Typical Turn-On Delay Time 49.2 ns

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Mfr. Part #: TP65H050G4WS