wholesale TP65H150G4LSG MOSFET supplier,manufacturer,distributor

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TP65H150G4LSG

MOSFET GAN FET 650V 13A TO220

  • MOSFET
  • TP65H150G4LSG
  • Transphorm
  • Cut Tape/Reel
  • TP65H150G4LSG Datasheet
  • In Stock
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Mfr. Part #: TP65H150G4LSG

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  • Specifications

Specifications

Manufacturer Transphorm
RoHS
Technology GaN
Mounting Style SMD/SMT
Package / Case 8x8 PQFN
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 13 A
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4.8 V
Qg - Gate Charge 8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 52 W
Channel Mode Enhancement
Series Gen IV
Packaging Cut Tape
Packaging Reel
Configuration Single
Brand Transphorm
Fall Time 8 ns
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 5.2 ns
Standard Pack Qty 1500
Subcategory MOSFETs
Typical Turn-Off Delay Time 48 ns
Typical Turn-On Delay Time 37.8 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the TP65H150G4LSG. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: TP65H150G4LSG

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