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TTA004BQ

Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans

Product Category: BJTs - Bipolar Transistors
Mfr. Part #
TTA004B,Q
Manufacturer: Toshiba
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: TTA004B,Q

Specifications

Specifications

Manufacturer Toshiba

Mounting Style Through Hole

Package / Case TO-126N-3

Transistor Polarity PNP

Configuration Single

Collector- Emitter Voltage VCEO Max 160 V

Collector- Base Voltage VCBO 160 V

Emitter- Base Voltage VEBO 6 V

Collector-Emitter Saturation Voltage 500 mV

Maximum DC Collector Current 1.5 A

Pd - Power Dissipation 1.5 W

Gain Bandwidth Product fT 100 MHz

Minimum Operating Temperature -

Maximum Operating Temperature + 150 C

Series TTA004B

Packaging Tube

DC Current Gain hFE Max 280

Technology Si

Brand Toshiba

Continuous Collector Current - 1.5 A

DC Collector/Base Gain hfe Min 140

Product Type BJTs - Bipolar Transistors

Standard Pack Qty 250

Subcategory Transistors

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Please send inquiry, we will respond immediately.

Mfr. Part #: TTA004B,Q