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TTD1409BS4X

Bipolar Transistors - BJT Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=25W F=1MHZ

Product Category: BJTs - Bipolar Transistors
Mfr. Part #
TTD1409B,S4X
Manufacturer: Toshiba
Package: Tube
Lead Free Status /RoHS Status:
Inventory: In Stock

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Mfr. Part #: TTD1409B,S4X

Specifications

Specifications

Manufacturer Toshiba

Mounting Style Through Hole

Package / Case TO-126N-3

Transistor Polarity NPN

Configuration Single

Collector- Emitter Voltage VCEO Max 400 V

Collector- Base Voltage VCBO 600 V

Emitter- Base Voltage VEBO 5 V

Collector-Emitter Saturation Voltage 2 V

Maximum DC Collector Current 6 A

Pd - Power Dissipation 2 W

Gain Bandwidth Product fT -

Minimum Operating Temperature -

Maximum Operating Temperature + 150 C

Series TTD1409B

Packaging Tube

DC Current Gain hFE Max 200

Brand Toshiba

Continuous Collector Current 2 A

DC Collector/Base Gain hfe Min 100

Product Type BJTs - Bipolar Transistors

Standard Pack Qty 50

Subcategory Transistors

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Please send inquiry, we will respond immediately.

Mfr. Part #: TTD1409B,S4X