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U290-E3

JFETs 30V N-Channel Through Hole 500mW 3 Ohm TO-206AC (TO-52)

Product Category: JFETs
Mfr. Part #
U290-E3
Manufacturer: ROHM
Lead Free Status /RoHS Status:
Data Sheet: U290-E3 Datasheet
Inventory: In Stock

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Mfr. Part #: U290-E3

Specifications
Product Details

Specifications

Manufacturer ROHM

Product Category JFETs

Series -

Packaging Tube

Package-Case TO-206AC, TO-52-3 Metal Can

Mounting-Type Through Hole

Supplier-Device-Package TO-206AC (TO-52)

FET-Type N-Channel

Power-Max 500mW

Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.

30V VDSS â€“ Drain-Source Voltage

- Current-Drain-Idss-Vds-Vgs=0

500mA @ 10V Current-Drain-Id-Max

- Voltage-Cutoff-VGS-off-Id

4V @ 3nA Input Capacitance

160pF @ 0V Resistance-RDS-On

Product Details

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

â€¢ Logic-Level Gate Drive

â€¢ Ultra Low On-Resistance
â€¢ Surface Mount (IRLR2905)
â€¢ Straight Lead (IRLU2905)
â€¢ Advanced Process Technology
â€¢ Fast Switching
â€¢ Fully Avalanche Rated

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Mfr. Part #: U290-E3