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UF28100V

RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB

  • Transistors RF
  • UF28100V
  • MACOM
  • Tray
  • UF28100V Datasheet
  • In Stock
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Mfr. Part #: UF28100V

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  • Specifications

Specifications

Manufacturer MACOM
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 12 A
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 100 MHz to 500 MHz
Gain 10 dB
Output Power 100 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case 744A-01
Packaging Tray
RF & Wireless RF MOSFET Transistors
Configuration Dual
Type RF Power MOSFET
Brand MACOM
Forward Transconductance - Min 1.5 S
Pd - Power Dissipation 250 W
Product Type RF MOSFET Transistors
Standard Pack Qty 10
Subcategory MOSFETs
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 6 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the UF28100V. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: UF28100V

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