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UPA800T-T1-A

RF BJT 35mA 8GHz 7.5dB Surface Mount 200mW SOT-363 2 NPN (Dual) 10V

Product Category: RF Transistors (BJT)
Mfr. Part #
UPA800T-T1-A
Manufacturer: CEL
Package: 6-TSSOP, SC-88, SOT-363
Lead Free Status /RoHS Status:
Data Sheet: UPA800T-T1-A Datasheet
Inventory: In Stock

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Mfr. Part #: UPA800T-T1-A

Specifications
Product Details

Specifications

Manufacturer CEL

Product Category RF Transistors (BJT)

Series -

Packaging Alternate Packaging

Package-Case 6-TSSOP, SC-88, SOT-363

Technology Si

Mounting-Type Surface Mount

Supplier-Device-Package SOT-363

Configuration Single

Power-Max 200mW

Transistor-Type 2 NPN (Dual)

Electric current collectors 35mA

Voltage-Collector-Emitter-Breakdown-Max 10V

DC-Current-Gain-hFE-Min-Ic-Vce 80 @ 5mA, 3V

Frequency-Transition 8GHz

Noise-Figure-dB-Typ-f 1.9dB @ 2GHz

Gain 7.5dB

Pd-Power-Dissipation 200 mW

Maximum Operating Temperature + 150 C

Operating temperature range - 65 C

Operating-Frequency 8000 MHz (Typ)

Transistor-Polarity NPN

Emitter-Base-Voltage-VEBO 1.5 V

Continuous-Collector-Current 0.035 A

Product Details

DESCRIPTION

The UPA800T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications.

FEATURES

â€¢ SMALL PACKAGE STYLE:
2 NE680 Die in a 2 mm x 1.25 mm package
â€¢ LOW NOISE FIGURE:
NF = 1.9 dB TYP at 2 GHz
â€¢ HIGH GAIN:
|S21E|2 = 7.5 dB TYP at 2 GHz
â€¢ EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE

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Please send inquiry, we will respond immediately.

Mfr. Part #: UPA800T-T1-A