wholesale UPA810T-T1 RF Transistors (BJT) supplier,manufacturer,distributor

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UPA810T-T1

RF BJT 100mA 4.5GHz 7dB ~ 9dB Surface Mount 200mW 6-SO 2 NPN (Dual) 12V

  • RF Transistors (BJT)
  • UPA810T-T1
  • CEL
  • 6-TSSOP, SC-88, SOT-363
  • UPA810T-T1 Datasheet
  • In Stock
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Mfr. Part #: UPA810T-T1

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  • Specifications
  • Product Details

Specifications

Manufacturer CEL
Product Category RF Transistors (BJT)
Series -
Packaging Cut Tape (CT)
Package-Case 6-TSSOP, SC-88, SOT-363
Mounting-Type Surface Mount
Supplier-Device-Package 6-SO
Power-Max 200mW
Transistor-Type 2 NPN (Dual)
Electric current collectors 100mA
Voltage-Collector-Emitter-Breakdown-Max 12V
DC-Current-Gain-hFE-Min-Ic-Vce 70 @ 7mA, 3V
Frequency-Transition 4.5GHz
Noise-Figure-dB-Typ-f 1.2dB ~ 2.5dB @ 1GHz
Gain 7dB ~ 9dB

Product Details

DESCRIPTION

The UPA810T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.

FEATURES

• SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
• HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
• HIGH COLLECTOR CURRENT: 100 mA

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the UPA810T-T1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: UPA810T-T1

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