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UPG2314T5N-E2-A

IC AMP BLUETOOTH 6-TSON

Product Category: RF Amplifiers
Mfr. Part #
UPG2314T5N-E2-A
Manufacturer: Renesas
Package: TSON-6
Lead Free Status /RoHS Status:
Data Sheet: UPG2314T5N-E2-A Datasheet
Inventory: In Stock

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Mfr. Part #: UPG2314T5N-E2-A

Specifications
Product Details

Specifications

Manufacturer RENESAS

Product Category RF Amplifiers

Series -

Packaging Package-Case

6-XFDFN Exposed Pad Frequency

2.4GHz ~ 2.5GHz Voltage-Supply

2.7 V ~ 3.6 V Supplier-Device-Package

6-TSON Current-Supply

65mA ~ 70mA Gain

- Test-Frequency

450MHz P1dB-Compression-Point

18dBm (63.1mW) ~ 20dBm (100mW) Noise-Figure

- RF-Type

Product Details

UPG2314T5N-E2-A Description

The UPG2314T5N-E2-A is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1.This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting.

UPG2314T5N-E2-A Features

• Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
• Supply voltage : VCC1, 2 = 2.7 to 3.6 V (3.0 V TYP.)
• Control voltage : Vcont = 0 to 3.6 V (3.0 V TYP.)
: Vbias + Venable = 0 to 3.1 V (3.0 V TYP.)
• Circuit current : ICC = 65 mA TYP. @ VCC1, 2 = 3.0 V, Vbias + Venable = 3.0 V, Vcont = 3.0 V, Pin = 0 dBm
• Output power : Pout = +20 dBm TYP. @ VCC1, 2 = 3.0 V, Vbias + Venable = 3.0 V, Vcont = 3.0 V, Pin = 0 dBm
• Gain control range : GCR = 23 dB TYP. @ VCC1, 2 = 3.0 V, Vbias + Venable = 3.0 V, Vcont = 0 to 3.0 V, Pin = 0 dBm
• High efficiency : PAE = 50% TYP.
• High-density surface mounting : 6-pin plastic TSON package (1.5 ï‚´ 1.5 ï‚´ 0.37 mm)

UPG2314T5N-E2-A Applications

•Power Amplifier for Bluetooth
•Commercial and defense avionics
•Electronic warfare
•Naval applications
•Mobile internet

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Mfr. Part #: UPG2314T5N-E2-A