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XP10N3R8P

MOSFET N-CH 100V 130 A TO-220

Product Category: MOSFET
Mfr. Part #
XP10N3R8P
Manufacturer: XSemi
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: XP10N3R8P Datasheet
Inventory: In Stock

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Mfr. Part #: XP10N3R8P

Specifications

Specifications

Manufacturer XSemi

Technology Si

Mounting Style Through Hole

Package / Case TO-220-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 100 V

Id - Continuous Drain Current 132 A

Rds On - Drain-Source Resistance 3.88 mOhms

Vgs - Gate-Source Voltage - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage 4 V

Qg - Gate Charge 85 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 2 W

Channel Mode Enhancement

Series XP10N3R8

Packaging Tube

Configuration Single

Height 4.5 mm

Length 28.75 mm

Transistor Type 1 N-Channel

Width 10 mm

Brand XSemi

Forward Transconductance - Min 100 S

Fall Time 200 ns

Product Type MOSFET

Rise Time 107 ns

Standard Pack Qty 1000

Subcategory MOSFETs

Typical Turn-Off Delay Time 63 ns

Typical Turn-On Delay Time 20 ns

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Mfr. Part #: XP10N3R8P